Diodes has released its first silicon carbide (SiC) Schottky barrier diodes, including 11 devices rated at 650 V and 8 devices rated at 1200 V. The 650-V DSCxxA065 series provides current ratings of 4 ...

CAMARILLO, Calif.--(BUSINESS WIRE)--Semtech Corporation (Nasdaq: SMTC), a leading supplier of high-performance analog and mixed-signal semiconductors and advanced algorithms, announced the ...

Cree, Inc., a market leader in silicon carbide (SiC) power devices, has introduced a series of packaged diodes that deliver the industry’s highest blocking voltage available in SiC Schottky technology ...

Infineon Technologies AG expands the comprehensive SiC portfolio introducing the 5th generation1200V thinQ!™ SiC Schottky diodes. Infineon Technologies AG expands the comprehensive SiC portfolio ...

Vishay Intertechnology, Inc. has announced the launch of three new Gen 3 650 V and 1200 V silicon carbide Schottky diodes, specifically the VS-3C01EJ12-M3, VS-3C02EJ07-M3, and VS-3C02EJ12-M3, which ...

Vishay Intertechnology VSH recently launched Gen 3 1200 V silicon carbide (SiC) Schottky diodes. The diodes boast high surge current robustness, low forward voltage drop, capacitive charge, and ...

In looking at any buck converter point-of-load regulator designed today, chances are that it uses synchronous rectification rather than a conventional diode for freewheeling Eric Persson, Executive ...

This course is primarily aimed at first year graduate students interested in engineering or science, along with professionals with an interest in power electronics and semiconductor devices . It is ...

New packaging design provides 50% reduction in thermal resistance compared to conventional USC packaging TOKYO--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation (“Toshiba”) announces ...

A new technical paper titled “Fully rubbery Schottky diode and integrated devices” was published by researchers at Penn State University. The Office of Naval Research and the National Science ...