Munich, Germany – Infineon Technologies calls its thinQ! family of Schottky diodes the first such line based on silicon carbide (SiC). Compared with conventional silicon or gallium arsenide diodes, ...

Diodes has released its first silicon carbide (SiC) Schottky barrier diodes, including 11 devices rated at 650 V and 8 devices rated at 1200 V. The 650-V DSCxxA065 series provides current ratings of 4 ...

CAMARILLO, Calif.--(BUSINESS WIRE)--Semtech Corporation (Nasdaq: SMTC), a leading supplier of high-performance analog and mixed-signal semiconductors and advanced algorithms, announced the ...

The 178-product lineup assembled by ROHM helps contribute to lower power consumption, smaller size, and higher reliability in a wider range of applications. A diode is one of the basic components ...

Vishay Intertechnology, Inc. has announced the launch of three new Gen 3 650 V and 1200 V silicon carbide Schottky diodes, specifically the VS-3C01EJ12-M3, VS-3C02EJ07-M3, and VS-3C02EJ12-M3, which ...

TOKYO--(BUSINESS WIRE)--Toshiba Corporation’s (TOKYO: 6502) Semiconductor & Storage Products Company today announced that it will expand its family of 650V silicon carbide (SiC) schottky barrier ...

This course is primarily aimed at first year graduate students interested in engineering or science, along with professionals with an interest in power electronics and semiconductor devices . It is ...

Members can download this article in PDF format. Power systems employ diodes to perform a variety of functions. For example, diodes can protect against damage due to power-source reverse-polarity ...

A Schottky junction-enhanced AuNPs/GOQDs nanocomposite enhances PDT efficacy by promoting reactive oxygen species (ROS) ...