Ampleon has announced a high-750W RF power transistor offering 72.5% at 915MHz, built on the firm’s Gen9HV 50V process. Called BLF0910H9LS750P, it operates from 902 to 928MHz making it suitable, ...

Abstract— Today’s on-chip Analog/Mixed-Signal and RF (A/RF) systems have reached a limit of size and complexity where transistor-level SPICE and FastSPICE simulation approaches cannot deliver a ...

Targeting pulsed-radar applications, the RFHA1025 280-W pulsed gallium nitride (GaN) RF matched power transistor operates over a broad frequency range of 0.96 to 1.2 GHz and delivers a high gain of ...

CYPRESS, Calif.--(BUSINESS WIRE)--The Semiconductor Division of Mitsubishi Electric US, Inc. today announced the availability of a new version of its RD07MUS2B 7W RF transistor that exceeds the ...

Wilmington, Delaware , Jan. 14, 2024 (GLOBE NEWSWIRE) -- Allied Market Research published a report, titled, “RF Transistor Market by Type (Bipolar RF Transistor, MOSFET RF Transistor, and Others) and ...

Active inductors have emerged as a transformative component in CMOS radio frequency (RF) circuit design, effectively replacing traditional passive inductors with active semiconductor networks. By ...

Ampleon has released the first of a family of RF power devices based upon its Advanced Rugged Technology (ART) derivative of its proven 9th generation high voltage LDMOS process technology. The ...

Ampleon has announced the BLU9H0408L-800P 800-W RF power transistor. Using the latest Gen9 (50V) LDMOS process technology it has been designed for use in high-power radar systems operating in the 400 ...

Although the ubiquitous LM386 IC was designed to be used as an audio amplifier, it has a number of undocumented characteristics that can be exploited to create simple radio receiver circuits that ...

Carbon nanotubes (CNTs), cylindrical nanostructures made of carbon atoms arranged in a hexagonal lattice, have proved to be ...