New Atlas

Ultra-high voltage transistors aim to boost EV range and efficiency

A University at Buffalo team has proposed a new form of power MOSFET transistor that can handle incredibly high voltages with minimal thickness, heralding an efficiency increase in the power ...
EDN

Power MOSFETs and their Applications

Power MOSFET’s development was partly driven by the limitations of bipolar junction transistors (BJTs). Today, this device has been the choice in power electronics applications. In this application ...
AZOM

MOSFETs and Their Advantages Over Other Transistors

Metal-oxide-semiconductor field-effect transistors (MOSFETs) have revolutionized the world of electronics due to their remarkable performance and widespread applications. The MOSFET transistor is a ...
Electronic Design

Rethink Power Density with GaN

The world of power electronics witnessed a breakthrough in 1959 when Dawon Kahng and Martin Atalla invented the metal-oxide-semiconductor field-effect transistor (MOSFET) transistor at Bell Labs. The ...
Electronics Weekly

Cambridge GaN Devices’ unusual 650V GaN transistors explained in video

Cambridge GaN Devices (CGN) has published a video explaining what is different about its novel 650V GaN transistors, which are actually GaN ICs that include circuits as well as the main power switch.
EDN

Guard-bands reduce MOSFET failures in space, part 1

ICs that go into space have testing requirements that exceed those for Earth-bound devices. I explained the process in Test power ICs to survive radiation. Now, I'll look at what happens to power ...